The defects introduced in n-type, intrinsic and p-type doped SiC by low energy (300 keV) room temperature electron irradiation near the silicon atom displacement threshold have been analyzed by electron paramagnetic resonance. We observed the predominant formation of defects currently assigned to carbon vacancy-hydrogen complexes in the Al doped and the high purity intrinsic material and no isolated carbon vacancies. If the models are correct, our results imply the presence of highly mobile H and their interaction with Vc defects even at 300 K. In the n-type SiC two Vs; related centers are observed tentatively attributed to 2-/3-charge states.