SiC films were deposited on SIMOX (Separation by IMplanted OXygen) substrates reactive by DC magnetron sputtering. A 4 in. magnetron silicon target was sputtered in an Ar/CH4 mixed DC magnetron glow discharge plasma. Non-Rutherford backscattering spectra were obtained using different incident Helium ion beam energies. The oxygen in the buried oxide layer formed by ion implantation and post anneal was detected using an incident energy of about 3.3 MeV, with a much higher backscattering yield than Rutherford backscattering. The composition of the buried layer was thus determined. Using incident energy of 4.3 MeV, which greatly enhance the intensity of carbon backscattering signals, the SiC films prepared were found stoichiometric by non-Rutherford backscattering. Furthermore, atomic force microscopy (AFM) studies found that the deposited SiC film had a rather smooth surface morphology. IR reflectance measurements showed that there existed a reststrahlen peak around 800 cm(-1) which is characteristic for SiC. No IR reflectance peaks related to bonded hydrogen in the film were identified. Spreading resistance probe (SRP) measurements were taken and found layered structure with quite different resistance.