We succeeded for the first time in creating the Auger transistor, in which in particular, we used a metal-insulator heterojunction instead of a widegap semiconductor. The Anger transistor base is created by holes, which are induced on silicon surface by electric field that exists in the thin oxide layer. The base is formed as a self-consistent quantum well near the n-silicon surface. The base width is about 10 Angstrom and the well depth is equal up to 0.7 eV, The regions of drift and impact ionization are practically separated in the Auger transistor. The S- and N-type instabilities of the collector current in the Auger transistor in the case of circuit with a common emitter are investigated.