Applied Surface Science, Vol.166, No.1-4, 437-441, 2000
Van der Waals-xenotaxy: growth of GaSe(0001) on low index silicon surfaces
Thin films of the layered chalcogenide GaSe were deposited on Si(111), Si(110), and Si(100) surfaces by molecular beam epitaxy. The interface formation was investigated with photoemission and LEED. In all cases GaSe grows with its hexagonal (0001) axis normal to the substrate surfaces.