The reconstruction and growth kinetics of gallium nitride (0001) and (000 (1) over bar) surfaces are studied using scanning tunneling microscopy (STM), reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED). Results for bare GaN surfaces are summarized, with particular attention paid to the "pseudo-1 x 1" reconstruction of the (0001) face. Changes in the surface structure and kinetic processes due to indium co-deposition during growth are discussed.