Fe has been sequentially deposited under ultra-high vacuum, from less than 1 ML up to over 120 ML (1 ML refers to the GaSe surface, approximate to 8 x 10(14) atoms/cm(2)), onto the clean (001) passive face of a 10-nm thick (approximate to 12 layers) GaSe film epitaxially grown by MBE onto a Si(111)1 x 1-H substrate and kept at room temperature. From low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements, a model in which Fe atoms intercalate into the layered semiconductor at room temperature is proposed. it assumes the formation of a ternary compound, which maintains the GaSe surface structure until saturation of the whole layered film by intercalated Fe, which would involve two Fe monolayers per pseudo-van der Waals gap.