Ballistic-electron emission microscopy (BEEM) and internal photoemission (IPE) measurements have been performed on Au/n-Si structures with (100) and (111) substrate orientation. Schottky-barrier energies E-B = 0.825 +/- 0.010 eV for Au/n-Si(111) and E-B = 0.790 +/-0.015 eV for Au/n-Si(100) have been obtained by using both methods. The barrier energies are found to be independent of the An-film thickness d. Furthermore, the internal yield Y for BEEM and IPE were determined and quantitatively compared to one another. For both methods, Y increases considerably as d decreases. For very thin Au-layers, the internal yield of both methods nearly converges. For thicker layers, their shapes differ slightly with the IPE yield data showing the higher values. The observations indicate that the different starting conditions of BEEM and IPE are of minor influence on the internal yield.