This report is devoted to investigation of Au-GaAs microrelief interfaces, prepared by anisotropic chemical etching, in comparison with flat ones. The microstructure of microrelief was revealed by SEM and AFM techniques. The comprehensive investigations of electric and photoelectric characteristics of Schottky barriers allow us to determine the electronic structure of the Au-GaAs interface (the recombination rate, the rate of charge exchange, the energy spectrum of surface electronic states, etc.). It is confirmed the better structure perfection of the anisotropic etched interface in comparison with flat one.