Nanocrystalline Ga0.62In0.38Sb particles embedded in SiO2 matrix were grown by radio frequency (RF) magnetron co-sputtering. X-ray diffraction (XRD) patterns and X-ray photoelectron spectroscopy (XPS) strongly support the existence of separated nanocrystalline Ga0.62In0.38Sb material in a SiO2 matrix, XPS core level data also reveal that there exists a SiO2 layer with a 1.1 eV chemical shift compared to that of pure SiO2, indicating that the SiO2 chemically adheres to the Ga0.62In0.38Sb. Room temperature Raman spectrum shows that the Raman peaks of Ga0.62In0.38Sb-SiO2 composite film have a larger red shift of 95.3 cm(-1) (LO) and 120.1 cm(-1) (TO) than those of bulk GaSb, suggesting the existence of phonon confinement and tensile stress effects.