Complex laterally ordered architectures of InGaAs quantum dot (QD) arrays are created by self-organized anisotropic strain engineering guided through steps generated on shallow mesa-patterned GaAs (3 1 1)B substrates. On stripe-patterned substrates the well-ordered, spot-like arrangement of ordered QD groups on planar, unpatterned substrates is transformed into a zigzag arrangement of periodic stripes which become straight, well ordered, and connected over macroscopic distances on zigzag mesa-patterned substrates. These findings highlight the concept of guided self-organized QD ordering for formation of complex QD architectures, establishing the building blocks for future quantum functional devices. (c) 2006 Elsevier B.V. All rights reserved.