An abrupt first-order metal-insulator transition (MIT) as a current jump is observed in Be-doped GaAs by inducing holes in a very low concentration of n(p) approximate to 5 x 10(14) cm(-3) into the valence band by the electric field; this is anomalous. In a higher hole-doping concentration of n(p) approximate to 6 x 10(16) cm(-1), the abrupt MIT is not observed at room temperature, but measured at a low temperature. The upper limit of the temperature allowing the MIT is deduced from experimental data to be approximately 440 K. The abrupt MIT is intrinsic and is compared with "breakdown" (an unsolved problem) produced by a high electric field in semiconductor devices. (c) 2006 Elsevier B.V. All rights reserved.