Low-temperature growth of InSb films on Si(1 1 1) substrate was performed in an ultra-high vacuum chamber by coevaporation of elemental Indium and Antimony. The grown InSb films were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). Despite large lattice mismatch of about 19.3% between them (1 1 1) preferentially oriented InSb films were obtained on Si(1 1 1) at the low growth temperature range of 200-300 degrees C. It is found that the high-quality InSb films with smooth surface and two kinds of domains grow on Si(1 1 1) substrate at the temperature rang of 220-240 degrees C. (c) 2006 Elsevier B.V. All rights reserved.