화학공학소재연구정보센터
Journal of Crystal Growth, Vol.293, No.2, 452-457, 2006
Growth and Raman spectroscopic investigation of CaxGd1-xVO4 single crystals for potential Raman laser media
CaxGd1-xVO4 crystals were grown by the Czochralski technique. X-ray diffraction analysis showed that as-grown crystals have a zircon-type structure belonging to the tetragonal system. The Ca2+-doped concentration was measured by ICP spectroscopy. It was found that the segregation coefficient of the Ca2+ ion (k(Ca)) decreased with increasing Ca2+ concentration. XPS experiments validated that V atoms remained pentavalent in CaxGd1-xVO4 crystals. The Raman spectra of CaxGd1-xVO4 crystals were investigated at room temperature. The results indicated that the Raman line intensity at about 885 cm(-1) increased exponentially with the increase of Ca2+ concentration. The Ca2+ dopant influenced the Raman property of GdVO4 single crystals. (c) 2006 Elsevier B.V. All rights reserved.