The p-CuIn(S1-xSex)(2) (CISS) thin films have been grown on n-Si substrate by solution growth technique. The deposition parameters, such as pH (10.5), deposition time (60 min), deposition temperature (50 degrees C), and concentration of bath solution (0.1 M) were optimized. Elemental analysis of the p-CuIn(S1-xSex)(2) thin film was confirmed by energy-dispersive analysis of X-ray (EDAX). The SEM study of absorber layer shows the uniform morphology of film as well as the continuous smooth deposition onto the n-Si substrates, whose grain size is 130 nm. CuIn(S1-xSex)(2) (x = 0.5) reveals (112) orientation peak and exhibits the chalcopyrite structure with lattice constant a = 5.28 angstrom and c = 11.45 angstrom. The J-V characteristics were measured in dark and light. The device parameters have been calculated for solar cell fabrication, V-oc = 411.09 mV, and J(sc) = 14.55 mA/cm(2). FF = 46.55% and eta = 4.64% under an illumination of 60 mW/cm(2). The J-V characteristics of the device under dark condition were also studied and the ideality factor was calculated, which is equal to 2.2 for n-Si/p-CuIn(S0.5Se0.5)(2) heterojunction thin film. (c) 2006 Elsevier B.V. All rights reserved.