The growth of low-density GaN quantum dots on AlxGa1-xN by metalorganic vapor phase epitaxy (MOVPE) using in situ etching of the AlxGa1-xN surface in the presence of SiH4, is reported. Subsequent growth stages have been verified by atomic force microscopy and micro-photoluminescence (mu PL). The low temperature mu PL shows sharp emission lines originating from single quantum dots, without any artificial masks or mesa structures. This proves that the proposed growth technique offers unique possibility for detailed optical studies of energetic structure and recombination processes of single GaN/AlxGa1-xN quantum dots. (c) 2006 Elsevier B.V. All rights reserved.