Thin films of ZnO were grown by metal-organic chemical vapor deposition (MOCVD) in a vertical injection MOCVD system on various substrates. Kinetics of ZnO growth by MOCVD were studied and an optimal growth window for this MOCVD toot was determined. Experimental growth conditions were chosen based on calculations of Reynolds Number (Re) and mixed convection parameter in order to select a growth window with stable gas flow and uniform heat transfer. Growth parameters were systemically varied within this window to determine the optimal growth conditions for this MOCVD tool and to study how these parameters affect film growth and quality. Dry etching of ZnO was also conducted in a low-pressure reactor to investigate the stability of ZnO in hydrogen at different temperatures. (c) 2005 Elsevier B.V. All rights reserved.