Growth rates of high-purity single-crystal 6H-SiC have been studied as a function of growth conditions during chemical vapor deposition process using silicon tetrachloride, propane, and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 degrees C. High-quality SiC crystals were deposited at growth rates in the 100-300 mu m/h range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. The results have been interpreted using thermodynamic equilibrium calculations. (c) 2005 Elsevier B.V. All rights reserved.