화학공학소재연구정보센터
Journal of Crystal Growth, Vol.284, No.1-2, 1-5, 2005
Integration of colossal magnetoresistors with GaAs
Colossal magnetoresistive (CMR) La0.67Ca0.33MnO3 (LCMO) and La0.67Sr0.33MnO3 (LSMO) films have been grown by pulsed laser deposition technique on GaAs(001) substrates buffered with epitaxial MgO layer. X-ray diffraction revealed strong c-axis out-of-plane orientation and strong in-plane texture of CMR/MgO bilayers on GaAs single crystal. The maximum temperature coefficient of resistivity TCR = 9.0% K-1 at 223 K and 2.0% K-1 at 327 K. and the magnetoresistance Delta rho/rho similar to-7.95% kOe(-1) and -1.47% kOe(-1) have been achieved for LCMO/MgO/GaAs and LSMO/MgO/GaAs heteroepitaxial structures, respectively. Comparison with the test LCMO and LSMO films grown directly onto the bulk MgO(001) single cry tal demonstrates the identity of LSMO/MgO/GaAs and LSMO/MgO films properties whereas the LCMO films grown on MgO buffered GaAs show lower transition temperature T-c = 242 K compared to 253 K in LCMO/MgO. (c) 2005 Elsevier B.V. All rights reserved.