The surface morphology of GaInP buffer layers mismatched to GaAs substrate is probed to study its impact on the distribution of self-organized InP island. The steps, facet island matrix and mismatch dislocations formed sequentially as Ga content increased in buffer layers. And the lateral distribution of InP island can be controlled efficiently by the steps, island matrix and mismatch dislocation. The island matrix, with about 100 nm periodicity, is found to be efficient to obtain InP island lateral distribution with 1 mu m periodicity on sample 3. The result also shows the dislocation had different functions to control the island distribution along different directions, [1 1 0] and [1 1 0] directions. (c) 2005 Elsevier B.V. All rights reserved.