A computational model for semiconductor crystal growth on a partially masked substrate under simplified liquid phase electroepitaxy conditions is developed. The model assumes isothermal diffusionat growth, which is enhanced by applied DC current through crystal-solution interface. A finite-difference, front-tracking method is used to numerically evolve the interface. Computed examples show strong influence of the electromigration on growth rates in vertical and lateral directions and the dependence of growth on electrical resistance of mask material, and on the wetting contact angle. (c) 2005 Elsevier B.V. All rights reserved.