Unintentionally doped p-type Ga2Te3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman-Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140-300 K). The current-voltage (I- V) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model. (c) 2005 Elsevier B.V. All rights reserved.