In this paper, we report results on the material quality of InGaAs/AlInAs lattice-matched to InP and the performance of a Fabry-Perot QC lasers grown by gas-source molecular beam epitaxy using a one-growth step procedure. The surface defect density of epi-layer with 10/cm(2) over a 2" diameter wafer are achieved. The Fabry-Perot QC lasers uncoated exhibit operation in quasi-continuous-wave at room temperature with a low threshold current density of 1.75KA/cm(2) and 7.95 μ m. The emitting wavelength is in good agreement with the predicted emission wavelength by design. © 2005 Elsevier B.V. All rights reserved.