Uncapped InAs/GaAs quantum dots with an average height of 14 nm were obtained combining a low growth rate (0.01 ML/s) and a high substrate temperature (520° C) during molecular beam epitaxy of InAs on GaAs(00 1). This achievement of a very narrow distribution (∼ 3%) of large coherent islands was made possible by the suppression of the nucleation of relaxed structures. When GaAs-capped, such quantum dots emit light well-above 1.2μ m (at 1.4K), exceeding the Ion -wavelength emissions obtained so far by similar samples. © 2005 Elsevier B.V. All rights reserved.