High-quality InAlGaAs digital-alloy active regions using submonolayer superlattices were developed and employed in a 3-stage bipolar cascade multiple-active-region vertical cavity surface emitting laser (VCSEL) design. The photoluminescence intensity and linewidth of these active regions were optimized by varying the substrate temperature and digitization period. These active regions exhibit considerable improvement over previously developed digital-alloy active regions and are comparable to analog-alloy active regions. Multiple-active-region VCSELs, grown all-epitaxially by MBE on InP, demonstrate greater than 100% output differential efficiency at 1.55-mu m emission. A record high 104% output differential efficiency was achieved for a 3-stage long-wavelength VCSEL. (c) 2005 Elsevier B.V. All rights reserved.