A "single-source" Sr-Ta heterometal alkoxide precursor, Sr[Ta(OEt)(5)(dmae)](2) (dmae = OCH2CH2NMe2), has been used for atomic vapour deposition (AVD) of SrBi2Ta2O9 (SBT). This single-source precursor is designed to alleviate the mismatch between conventional Sr and Ta sources. Strontium tantalate thin films were deposited on silicon using the Sr[Ta(OEt)5(dmae)](2), and the optimum temperatures for deposition of strontium tantalate with a Sr:Ta ratio of 0.5 was found to be similar to510degreesC. Deposition of Bi-oxide films using Bi(MMP)(3) (mmp=OCMe2CH2OMe) indicates similar decomposition behaviour to the Sr-Ta alkoxide precursor, demonstrating its suitability as a complementary source of Bi for SBT. The co-incorporation of Bi and Sr within the SBT films is promoted through the deposition of bismuth oxide/strontium tantalate super lattices. After post-growth annealing the super lattices are converted to strontium bismuth tantalate thin films. (C) 2004 Elsevier B.V. All rights reserved.