The dilute nitrides like (GaIn)(NAs) or Ga(NAsSb) are attractive materials for the next generation of photovoltaic cells with four to six active junctions. Unfortunately, these compounds suffer from a low minority carrier diffusion length. This can be partially compensated by choosing suitable device structures with a reduced prerequisite on the necessary current density. (GaIn)(NAs) solar cells with a bandgap between 1.0 and 1.2 eV have been grown by metal organic vapor-phase epitaxy on single- and 8 x 4-in multiwafer reactors. Short-circuit current densities up to 10.9 mA/cm(2) (AM0) have been achieved for a (GaIn)(NAs) cell filtered with GaAs. This excellent value is sufficient for the application in five- or six-junction photovoltaic cells. Challenges are resulting from the transfer of growth conditions to a production size multi-wafer MOVPE reactor, which are discussed in this paper. (C) 2004 Elsevier B.V. All rights reserved.