The growth of Al-containing antimonides has been proven to be specially challenging. New precursors like dimethylethylamine alane (DMEAA) or tritertiarybutylaluminium (TTBA1) are used due to their low decomposition temperatures. Unfortunately, these precursors suffer from severe prereactions with other metalorganics. Furthermore, the low vapor pressures of these sources limit the economical use in multiwafer MOVPE systems. A new 9 x 2-in substrate configuration has been developed to meet the demands of the growth of Al-containing antimonides in an AlX2600-G3 Planetary Rcactor(R). This is the first multiwafer reactor that was specifically designed for the growth of antimonides. The major advantages of this configuration are reduced prereactions in the gas phase, high MO efficiency, excellent layer homogeneity and reproducibility. (C) 2004 Elsevier B.V. All rights reserved.