Low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) growth of lattice-matched p-type InGaAs on InP substrates using a new dopant precursor, carbon trichloro bromide (CBrCl3) has been investigated. The p-type conductivity with a hole concentration up to 10(19) cm(-3) based on the Hall measurement has been achieved only in the samples grown under very limited conditions such as a V/III ratio below 5, a growth temperature around 540 to 550degreesC and high growth rates over 100nm/min. The X-ray rocking-curve analysis of these samples has revealed that the conduction type does not depend on the type of stress such as tensile or compression caused by a very small lattice mismatch within \Deltaa\less than or equal to5 x 10(-3). However, it has been found that samples with hole concentration over 10(18) cm(-3) always exhibit the tensile stress and the efficiency of the p-type doping has been enhanced by the introduction of tensile stress controlled by the growth. (C) 2004 Elsevier B.V. All rights reserved.