We have successfully obtained GaN self-assembled quantum dots (QDs) with high density (>2 x 10(11) cm(-2)) by the Stranski-Krastanow growth mode in metalorganic chemical vapor deposition. The density of the QDs can be controlled between 10(8) and 10(11) cm(-2) by changing an amount of GaN nominally deposited. The photoluminescence peaks from both the QDs and the wetting layer are clearly observed even in uncapped QD structures at room temperature. (C) 2004 Elsevier B.V. All rights reserved.