Using digital-alloy InGaAlAs, 1.55 mum InGaAs/InGaAlAs multi-quantum wells were fabricated. It was found that the linewidth of 10-photoluminescence (PL) (5.7meV) is narrower than that of conventional InGaAs/In(Ga)AIAs multi-quantum wells grown using present state-of-the-art growth methods. The narrower linewidth is attributed to the elongated effective-well-width and the increased 3 dimensional properties, due to carrier tunneling through the digital-alloy InGaAIAs barrier. The standard deviation of 300 K-PL peak wavelengths over the entire 2-in. wafer is 1.8 rim and the area ratio of the uniform PL peak intensity is approximately 64% of the entire wafer. This is the first report on this material system. (C) 2004 Elsevier B.V. All rights reserved.