Journal of Crystal Growth, Vol.270, No.1-2, 128-132, 2004
Microstructure and residual stress in gamma-LiAlO2 layer fabricated by vapor transport equilibration on (11(2)over-bar0) sapphire
gamma-LiAlO2 layers have been fabricated by vapor transport equilibration (VTE) technique on (11 (2) over bar0) sapphire substrate. Microstructure of gamma-LiAlO2 layers is characterized by X-ray diffraction as functions of VTE treatment temperature and sapphire surface roughness, it has been found that the LiAlO2 layers show a (200) preferred orientation. The effects of the VTE treatment temperature and sapphire surface roughness on the residual stress have been studied. The results show that residual stress in gamma-LiAlO2 layers varies from tension to compression with increasing VTE treatment temperature, but the thermal stress is compressive; the values of residual stress in gamma-LiAlO2 layers increase with the sapphire surface roughness. (C) 2004 Elsevier B.V. All rights reserved.
Keywords:residual stress;surface toughness;VTE treatment temperature;vapor transport equilibration;gamma-LiAlO2 layers