Mn-doped films were grown in an ammonia-source HVPE system. Mn3GaN0.5 and GaN were detected in film samples without other phase when the HCl-Mn/NH3 ratio range from 1/200 to 1/100. (GaxMn1-x)N phase also formed in films. Two broad bands centered at 305 and 674 cm(-1) and new peaks at wave numbers of 592 cm(-1) arised in Raman spectra of Mn-doped films. It was also found that A(1)(LO) modes of all Mn-doped samples were strongly asymmetric and showed a considerable redshift. Mn-doped films showed an obvious hysteresis loops at room temperature. Mn-doped films showed metallic characteristic and this mixed structure may be greatly beneficial to spin injection magneto transport devices. (C) 2004 Elsevier B.V. All rights reserved.