Lasers with InGaAsP quantum well were grown on GaAs substrates by solid source MBE with phosphorus-cracker,cell. Threshold current density of 290A/cm(2) and slope efficiency as high as 0.68 W/A per facet were obtained for uncoated laser chips at 25degreesC. Reliability test was performed, and power degradation rate of less than 3 x 10(-6) /h was obtained for laser bars operating at 47 A. (C) 2004 Elsevier B.V. All rights reserved.