The metal-ferroelectric insulator-semiconductor (MFIS) structure has been fabricated using Bi3.54Nd0.46Ti3O12 (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at 700degreesC for I h. The J-V curve shows the MFIS structure has a good insulating property. C V hysteresis loops at various sweeping speed were collected as were polarization types. The leakage current density, dielectric constant and dielectric loss were found to be dependent on the annealing temperature. The dielectric constant and dielectric loss at a frequency of 100kHz are 98 and 0.092, respectively. (C) 2004 Elsevier B.V. All rights reserved.