The growth kinetics influence on the structural and optical properties of quantum dot ensembles in the Ge/Si(1 0 0) and InAs/GaAs(1 0 0) heteroepitaxial systems is studied theoretically and experimentally. A kinetic model of the stress-driven formation of quantum dots is developed providing a description of the time evolution of island size and density depending on the growth temperature, on the growth rate and on the total amount of deposited material. The quantum dot ensembles in the Ge/Si and InAs/GaAs systems are grown by molecular beam epitaxy at different conditions and studied by applying atomic force microscopy, transmission electron microscopy and photoluminescence spectroscopy. Theoretical and experimental results provide a detailed quantitative characterization of quantum dot ensembles in terms of their size and density depending on the technologically controlled growth conditions and provide a way for a kinetically controlled engineering of quantum dot ensembles with the desired properties. (C) 2004 Elsevier B.V. All rights reserved.