We report growth and electrical properties of low-resistance, silicon-doped polycrystalline InAs (poly-InAs) by molecular beam epitaxy. The material was characterized by Hall measurements, scanning electron microscopy, and transmission line measurements. The resistivity of poly-InAs is found to have a strong dependence on film thickness and grain size as well as the density of the crystallite grains. The low-resistivity poly-InAs is proposed as an extrinsic emitter contact material in III-V heterojunction bipolar transistors similar to the polycrystalline silicon used as contacts in silicon bipolar junction transistor technology. (C) 2004 Elsevier B.V. All rights reserved.