We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1 X 10(-2) and 4.5 x 10(-2) Omega cm for (1 1 1)A planes with the growth at 500degreesC and 540degreesC, respectively. The layers on (0 0 1) planes show a resistivity of 8.9 x 10(-1) Omega cm with the growth at 500degreesC, being essentially undoped with the growth at 540degreesC (.) We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure. (C) 2004 Elsevier B.V. All rights reserved.