화학공학소재연구정보센터
Journal of Crystal Growth, Vol.266, No.1-3, 278-282, 2004
Various phase-field approximations for Epitaxial Growth
We present diffuse interface approximations for a step flow model in epitaxial growth. In this model, the motion of step edges of discrete atomic layers is determined by the time evolution of an introduced phase-field variable. In order to incorporate the attachment-detachment kinetics at step edges into the phase-field model a degenerate mobility-function is established. The model is used to simulate the evolution of a step train. (C) 2003 Elsevier B.V. All rights reserved.