Short period AlN/GaN quantum cascade (QC) laser structures that utilize 1 polarization field for electron injection were fabricated by hot wall epitaxy. A (GaN)(n)/(AlN), short period superlattice with several molecular layers of AlN was designed in order to realize a mid-infrared laser. The QC structures were analyzed by X-ray diffraction (XRD) measurements, atomic force microscopy and cross-sectional transmission electron microscopy observation. The XRD patterns and cross-sectional TEM images showed that a well-controlled quantum cascade structure could be prepared by hot wall epitaxy without inter-diffusion of the layers. (C) 2004 Elsevier B.V. All rights reserved.