We present a fast and straightforward method for the cross-sectional analysis of self-assembled InAs quantum dots using atomic force microscopy. The new approach needs a minimum amount of time and sample preparation (cleaving and, if necessary, etching with a solution of hydroxylamine/hydrogen-peroxide) to obtain the cross-sectional dot density and information on the degree of stacking, which are important parameters in the production of self-assembled quantum dot devices, and provides the means for fast cross-sectional wafer mapping. (C) 2004 Elsevier B.V. All rights reserved.