A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd1-xZnxTe. In Cd0.95Zn0.05Te crystals, Cd-i(..) is found to be the main point defect at high Cd partial pressures, and V"(Cd) at low partial pressures. On the Te-rich side, the concentrations of Te-ca(..) and Te-ca(.) are sufficiently high to significantly influence the electrical properties of Cd0.95Zn0.05Te. Excess Te in Te-rich crystals may result in ionized Cd vacancies and Te anti-sites while excess Cd in Cd-rich Cd0.95Zn0.05Te may exist as Cd interstitials. A detailed recipe for the post-growth annealing of Cd0.95Zn0.05Te is suggested following calculations based on the model. (C) 2003 Elsevier B.V. All rights reserved.