The effects of TiCl4 flow rate and RF power on PECVD of TiSi2 thin films using TiCl4/H-2 gas mixture have been investigated. In the reaction system used, the low-resistivity phase C54-TiSi2 film with homogeneous composition and smooth interface was obtained when the TiCl4 flow rate and the RIF power were optimized at 0.4 seem and 200 W. The film surface and the film/substrate interface became rough at higher TiCl4 flow rate whereas the deposition rate was slow and the Ti5Si3 was formed at lower TiCl4 flow rate. At higher RF power, Ti5Si3 and TiSi phases were formed while at lower RF power the film surface became rough. These results are discussed with reference to the optical emission intensity of the plasma and the estimated temperature of hydrogen atom in the plasma. (C) 2003 Elsevier B.V. All rights reserved.