화학공학소재연구정보센터
Journal of Crystal Growth, Vol.257, No.1-2, 141-145, 2003
Crystal growth and spectroscopic properties of Er : La3Ga5SiO14 single crystals
In this paper, single crystal of erbium (Er) doped La3Ga5SiO14 has been grown along the c-axis by using the Czochralski method. The crystal structure still belongs to space group P321. The absorption spectrum and fluorescence spectrum of the Er3+ :La3Ga5SiO14 crystal were measured at room temperature. The segregation coefficients of Er3+ in La3Ga5SiO14 crystal were measured by X-ray fluorescence analysis (XRF). For the 1 mol% doping level in the melt, the distribution coefficient of Er3+ was determined to be 0.117wt%. (C) 2003 Elsevier B.V. All rights reserved.