Journal of Crystal Growth, Vol.256, No.1-2, 89-95, 2003
Growth and characterization of Sr3TaGa(3)Si(2)O(14) crystal
Sr3TaGa3Si2O14 (STGS) crystal boules were grown by the Czochralski method using Z-, Y- and X-axis seed, respectively. Crystal growth experimental results show that a perfect crystal could be grown by using the X-axis seed, and the as-grown crystal boule is transparent with free inclusion and no crack. The X-ray powder diffraction (XRPD) analysis shows that the structure of STGS crystal is the same as that of La3Ga5SiO14 (LGS) crystal. The XRPD pattern was calculated and indexed by using the program TREOR. The segregation coefficients of Sr3+, Ta5+, Ga3+ and Si4+ ions in crystal growth were measured by using the X-ray fluorescent analysis method, and the results show that the chemical compositions of the as-grown STGS crystals are consistent with their raw materials. The special heat, the thermal expansion and the transmission spectrum of STGS have been measured too, and the results show STGS possesses better thermal properties and transmittance than LGS. The test result on the Q-switch properties indicates STGS has poor electrooptic effect and may not be used as a Q-switch. (C) 2003 Elsevier Science B.V. All rights reserved.
Keywords:segregation coefficients;X-ray diffraction;Czochralski method;Sr3TaGa3Si2O14;electrooptic Q-switch