The lateral composition modulation of strain compensated (GaInP)(m)(GaInAs)(m) short-period superlattices (SPSL) has been investigated. Transmission electron microscopy results show that long-range lateral composition modulation is formed in m = 2 SPSL grown at 400degreesC by atomic layer molecular beam epitaxy. The evolution of photoluminescence (PL) peak with temperature shows a blue shift with increasing temperature; in addition, low-temperature PL is strongly polarized. These properties are attributed to the lateral composition modulation. Quantum wires (QWRs) were formed using (GaInP)(m)(GaInAs)(m) SPSL as quantum wells in a multiquantum well heterostructure. The formation of QWR is confirmed by their PL properties. (C) 2003 Elsevier Science B.V. All rights reserved.