Journal of Crystal Growth, Vol.252, No.1-3, 219-225, 2003
Structural properties of CdO layers grown on GaAs (001) substrates by metalorganic molecular beam epitaxy
Transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made to investigate the microstructural behaviour of rock-salt CdO layers grown on (0 0 1) GaAs substrates with two different buffer layers of ZnS and ZnO/ZnS. It is shown that the CdO layer grown on the ZnS buffer layer has epitaxial relationship to the GaAs substrate, even though a low density of CdO nano-crystallites (18-25 nm across) are formed at the CdO/ZnS interface region. TEM and TED results show that the CdO layer grown on the ZnO/ZnS buffer layer is polycrystalline. TED results also show that the ZnO buffer layer is polycrystalline with a mixture of wurtzite and zinc-blende phases, which results in the formation of polycrystalline CdO layers. (C) 2003 Published by Elsevier Science B.V.
Keywords:crystal structure;defects;metalorganic molecular beam epitaxy;oxides;semiconducting II-VI materials