TI-containing III-V semiconductors are expected to produce temperature-insensitive wavelength laser diodes, which are important in wavelength division multiplexing, optical fiber communication systems. TlInGaAs/InP double heterostructure lasers were grown by gas source MBE. Temperature variation of electroluminescence emission peak wavelength as small as 0.064 nm/K (0.047 meV/K) was observed. Current injection pulsed laser operation was obtained up to 3 10 K. The threshold current density was about 5 kA/cm(2) at 1.66 mum at room temperature. To value was about 90 K. CW operation was also obtained at 77 K. (C) 2002 Elsevier Science B.V. All rights reserved.