We report high-quality mid-infrared electroluminescent devices based on a quantum cascade design using InAs/GaSb/AlSb heterostructures grown on GaSb substrates. The key growth issues for the antimonide/arsenide interfaces are described. The interface bond types are controlled in order to optimize the structural properties and minimize the stress within the heterostructures. These results allow us to properly design and fabricate InAs/GaSb/AlSb quantum cascade light emitting devices including 23-periods of the active region and cladding layers made of InAs/AlSb superlattices. GaSb layers have been included in the design to enhance the active region refractive index. A well-resolved electroluminescent peak is observed up to room temperature at 4.5 mum in good agreement with the result of our model. We show that the waveguide must be optimized further to make it possible to achieve quantum cascade lasers based only on the binaries InAs, GaSb and AlSb. (C) 2002 Elsevier Science B.V. All rights reserved.