We have grown the compound semiconductor ZnO1-xSex by radical source MBE. SIMS depth profile of Se concentration shows the compositional ordering of the ZnO1-xSex layers. The period of ZnO1-xSex natural compositional ordering decreases with increasing Se. concentration. The lateral coherence of the compositional alternations of ZnO1-xSex cannot be explained without taking into account the dynamical surface processes into consideration. (C) 2002 Elsevier Science B.V. All rights reserved.