Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Xu ZC; Leosson K; Birkedal D; Hvam JM; Sadowski I; Zhao ZY; Chen XS; Liu YM; Yang KT

Journal of Crystal Growth, Vol.251, No.1-4, 177-180, 2003

DOI10.1016/S0022-0248(02)02388-6 Export Citation

Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Xu ZC, Leosson K, Birkedal D, Hvam JM, Sadowski I, Zhao ZY, Chen XS, Liu YM, Yang KT

The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs' structure mainly changes along the growth direction. (C) 2002 Elsevier Science B.V. All rights reserved.

Keywords:nanostructures;X-ray diffraction;molecular beam epitaxy;semiconducting III-V materials